Anomalous Shot Noise and Non-Fermi Liquid Electron Transport in Bad Metal β-phase Tantalum and Matel-to-Insulator Transition Material Tantalum Nitride Nanojunctions 公开

Abstract

We measured electronic shot noise in vertical junctions of bad metal β-phase

tantalum and the metal–insulator–transition material tantalum nitride (TaN). For

β-phase tantalum, the length dependence of Fano factor has the same trend as the

Fermi-liquid metal Ag. However, the characteristic length scale is much smaller in

β-phase tantalum, suggesting an anomalous electron thermalization mechanism and a

possibility of strong correlation. In TaN vertical junctions, F = 1/3 was found length

ranging from 4nm to 20nm, corresponding to diffusive transport in the Fermi-liquid

picture. To evaluate the disorder of TaN crystal lattice, we designed and analyzed the

setup and procedure of Hall measurements on TaN Hall bars. Our investigation can

provide evidence of non-Fermi liquid system and inspiration on electron thermalization

mechanism in bad metals and metal-to-insulator transition materials.

Table of Contents

Contents

1 Introduction 1

2 Methods 8

3 Results and Discussion 13

4 Conclusion 24

Bibliography 26

About this Honors Thesis

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School	Emory College
Department	Physics
Degree	B.S.
Submission	Honors Thesis
Language	English
Research Field	Physics, Low Temperature Physics, Condensed Matter
关键词	Nano Thin Films, Electron Transport, Non-Fermi Liquid Materials, Strongly Correlated Systems
Committee Chair / Thesis Advisor	Sergei Urazhdin, Emory University
Committee Members	Erin Bonning, Emory University Justin Burton, Emory University

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